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26 April 2024
 
  » arxiv » cond-mat/0103358

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The order-disorder character of the (3x3) to (sqrt3 x sqrt3)R30° phase transition of Sn on Ge(111)
L. Petaccia ; L. Floreano ; A. Goldoni ; D. Cvetko ; A. Morgante ; L. Grill ; A. Verdini ; G. Comelli ; G. Paolucci ; S. Modesti ;
Date 16 Mar 2001
Journal Phys. Rev. B 64, (2001) 193410
Subject Materials Science | cond-mat.mtrl-sci
Affiliation1,2), A. Morgante , L. Grill , A. Verdini , G. Comelli , G. Paolucci and S. Modesti ( Lab. TASC-INFM, Trieste, Italy Sincrotrone Trieste, Trieste, Italy
AbstractGrowing attention has been drawn in the past years to the alpha-phase (1/3 monolayer) of Sn on Ge(111), which undergoes a transition from the low temperature (3x3) phase to the room temperature (sqrt3 x sqrt3)R30° one. On the basis of scanning tunnelling microscopy experiments, this transition was claimed to be the manifestation of a surface charge density wave (SCDW), i.e. a periodic redistribution of charge, possibly accompanied by a periodic lattice distortion, which determines a change of the surface symmetry. Recent He diffraction studies of the (3x3) long range order have shown the transition to be of the order-disorder type with a critical temperature Tc=220 K and belonging to the 3-state Potts’ universality class. These findings clearly exclude an SCDW driven mechanism at 220 K, but they cannot exclude the occurence of a displacive transition at higher temperature. Here we present photoelectron diffraction data taken at 300 K and photoemission data taken up to 500 K (which is the maximum temperature where the (sqrt3 x sqrt3)R30° is stable) . From our analysis it is shown that the atomic structure of the Sn overlayer does not change throughout the transition up to 500 K. As a consequence the displacive hypothesis must be discarded in favour of a genuine order-disorder model.
Source arXiv, cond-mat/0103358
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