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26 April 2024 |
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Landé g Tensor in Semiconductor Nanostructures | | T P Mayer Alegre
; F G G Hernández
; A L C Pereira
; G Medeiros-Ribeiro
; | | Date: |
8 Dec 2006 | | Journal: | Phys Rev Lett, 97 (23), 236402 | | Abstract: | Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing mapping of the g-tensor modulus for the s and p shells. We find that the g tensors for the s and p shells exhibit a very different behavior. The s state, being more localized, probes the confinement potential details by sweeping the magnetic-field orientation from the growth direction towards the in-plane direction. For the p state, the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. In addition to the assessment of the g tensor, these results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed. | | Source: | PubMed, pmid17280218 | | Services: | Forum | Review | Favorites | |
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