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26 April 2024 |
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Article overview
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Ultrahigh electron mobility in suspended graphene | | K. I. Bolotin
; K. J. Sikes
; Z. Jiang
; G. Fudenberg
; J. Hone
; P. Kim
; H. L. Stormer
; | | Date: |
17 Feb 2008 | | Abstract: | We have achieved mobilities in excess of 200,000 cm^2/Vs at electron
densities of ~2*10^11 cm^-2 by suspending single layer graphene. Suspension
~150 nm above a Si/SiO_2 gate electrode and electrical contacts to the graphene
was achieved by a combination of electron beam lithography and etching. The
specimens were cleaned in situ by employing current-induced heating, directly
resulting in a significant improvement of electrical transport. Concomitant
with large mobility enhancement, the widths of the characteristic Dirac peaks
are reduced by a factor of 10 compared to traditional, non-suspended devices.
This advance should allow for accessing the intrinsic transport properties of
graphene. | | Source: | arXiv, 0802.2389 | | Services: | Forum | Review | PDF | Favorites | |
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