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26 April 2024
 
  » arxiv » 1103.5641

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Dangling bonds in a-Si:H revisited: A combined Multifrequency EPR and DFT Study
M. Fehr ; A. Schnegg ; B. Rech ; K. Lips ; O. Asthakov ; F. Finger ; G. Pfanner ; C. Freysoldt ; J. Neugebauer ; R. Bittl ; C. Teutloff ;
Date 29 Mar 2011
AbstractMultifrequency pulsed electron paramagnetic resonance (EPR) spectroscopy using S-, X, Q, W-Band frequencies (3.6, 9.7, 34, and 94 GHz, respectively) was employed to study paramagnetic coordination defects in undoped hydrogenated amorphous silicon (a-Si:H). The improved spectral resolution at high magnetic field reveals a rhombic splitting of the g-tensor with the following principal values: g_x=2.0080, g_y=2.0060 and g_z=2.0033 and shows pronounced g-strain, i.e., the principal values are widely distributed. The multifrequency approach furthermore yields precise 29Si hyperfine data. Density functional theory (DFT) calculations on 27 computer-generated a-Si:H dangling-bond models yielded g-values close to the experimental data but deviating hyperfine interaction values. We show that paramagnetic coordination defects in a-Si:H are more delocalized than computer-generated dangling-bond defects and discuss models to explain this discrepancy. In addition to coordination defects, we observed, for the first time, paramagnetic centers which show a strong 1H hyperfine interaction of 320 MHz. These centers are possibly due to paramagnetic configurations of Si-Si bond-centered hydrogen atoms, or spatially correlated hydrogen/dangling-bond centers.
Source arXiv, 1103.5641
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