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26 April 2024

» arxiv » 1107.0085

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Three-Fold Diffraction Symmetry in Epitaxial Graphene and the SiC Substrate
David A. Siegel ; Shuyun Zhou ; Farid El Gabaly ; Andreas K. Schmid ; Kevin F. McCarty ; Alessandra Lanzara ;
Date:	1 Jul 2011
Abstract:	The crystallographic symmetries and spatial distribution of stacking domains in graphene films on SiC have been studied by low energy electron diffraction (LEED) and dark field imaging in a low energy electron microscope (LEEM). We find that the graphene diffraction spots from 2 and 3 atomic layers of graphene have 3-fold symmetry consistent with AB (Bernal) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent 6-fold symmetry, although the 3-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.
Source:	arXiv, 1107.0085
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