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26 April 2024

» arxiv » 1107.4121

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Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap
T. S. Shamirzaev ; J. Debus ; D. S. Abramkin ; D. Dunker ; D. R. Yakovlev ; D. V. Dmitriev ; A. K. Gutakovskii ; L. S. Braginsky ; K. S. Zhuravlev ; M. Bayer ;
Date:	20 Jul 2011
Abstract:	The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function, which allows one to explain the photoluminescence decay with one fitting parameter only.
Source:	arXiv, 1107.4121
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