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26 April 2024

» arxiv » 1202.0735

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Atomically thin boron nitride: a tunnelling barrier for graphene devices
Liam Britnell ; Roman V. Gorbachev ; Rashid Jalil ; Branson D. Belle ; Fred Schedin ; Mikhail I. Katsnelson ; Laurence Eaves ; Sergey V. Morozov ; Alexander S. Mayorov ; Nuno M. R. Peres ; Antonio H. Castro Neto ; Jon Leist ; Andre K. Geim ; Leonid A. Ponomarenko ; Kostya S. Novoselov ;
Date:	3 Feb 2012
Abstract:	We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
Source:	arXiv, 1202.0735
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