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Tailoring electronic and elastic properties by varying composition of the CuGa1-xAlxS2 chalcopyrite semiconductor | | M.G. Brik
; C.G Ma
; | | Date: |
17 Apr 2013 | | Abstract: | Influence of composition and external hydrostatic pressure on the structural,
electronic, and optical properties of the CuGa1-xAlxS2 (x=0, 0.25, 0.5, 0.75,
1.0) chalcopyrite semiconductor was analyzed by means of the first-principles
calculations. Dielectric functions and optical absorption spectra were
calculated for all considered aluminum concentrations. The pressure
coefficients of the calculated band gaps and position of the lowest in energy
absorption peaks were extracted from the calculated results. One of the main
results is that substitution of 25% of gallium by aluminum (thus forming the
CuGa0.75Al0.25S2 semiconductor) increases absorption in the visible part of the
solar spectrum by about 6%, which can be important for the solar cell
applications. | | Source: | arXiv, 1304.4790 | | Services: | Forum | Review | PDF | Favorites | |
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