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27 April 2024

» arxiv » 1308.2076

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High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (533) silicide structure on Cu(001)
B. Lalmi ; M. Chorro ; R. Belkhou ;
Date:	9 Aug 2013
Abstract:	Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM) and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (~ 0.5 ML) and after annealing at 100{deg}C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the structure.
Source:	arXiv, 1308.2076
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