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Optimal interface doping at La_2/3Sr_1/3MnO_3/SrTiO_3(001) heterojunctions for spintronic applications | | C. Wang
; N. Stojic
; N. Binggeli
; | | Date: |
29 Aug 2013 | | Abstract: | We examine, by means of ab initio pseudopotential calculations,
La_2/3Sr_1/3MnO_3/SrTiO_3 (LSMO/STO) heterojunctions in which one unit layer of
La_(1-x)Sr_xMnO_3 (with 0<x<1) is inserted at the interface. The optimal
interlayer doping x for a robust interface ferromagnetism is investigated by
considering the energy differences between antiferromagnetic and ferromagnetic
alignment of the MnO_2-interface layer relative to bulk LSMO. The optimal
doping is found to be close to x=1/3, which corresponds to an abrupt TiO_2
(001)-layer termination of STO. This is also the composition which gives the
largest p-type Schottky barrier height in our calculations. | | Source: | arXiv, 1308.6400 | | Services: | Forum | Review | PDF | Favorites | |
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