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26 April 2024 |
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Article overview
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Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells | | Qingze Wang
; Xin Liu
; Hai-Jun Zhang
; Nitin Samarth
; Shou-Cheng Zhang
; Chao-Xing Liu
; | | Date: |
17 Nov 2013 | | Abstract: | The quantum anomalous Hall effect has recently been observed experimentally
in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($sim$ 30mK).
In this work, we propose realizing the quantum anomalous Hall effect in more
conventional diluted magnetic semiconductors with doped InAs/GaSb type II
quantum wells. Based on a four band model, we find an enhancement of the Curie
temperature of ferromagnetism due to band edge singularities in the inverted
regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum
anomalous Hall effect is confirmed by the direct calculation of Hall
conductance. The parameter regime for the quantum anomalous Hall phase is
identified based on the eight-band Kane model. The high sample quality and
strong exchange coupling make magnetically doped InAs/GaSb quantum wells good
candidates for realizing the quantum anomalous Hall insulator at a high
temperature. | | Source: | arXiv, 1311.4113 | | Services: | Forum | Review | PDF | Favorites | |
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