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26 April 2024 |
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Article overview
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Electrically tuned magnetic order and magnetoresistance in a topological insulator | | Zuocheng Zhang
; Xiao Feng
; Minghua Guo
; Kang Li
; Jinsong Zhang
; Yunbo Ou
; Yang Feng
; Lili Wang
; Xi Chen
; Ke He
; Xucun Ma
; Qikun Xue
; Yayu Wang
; | | Date: |
24 Sep 2014 | | Abstract: | The Dirac-like surface states of the topological insulators (TIs) are
protected by time reversal symmetry (TRS) and exhibit a host of novel
properties. Introducing magnetism into TI, which breaks the TRS, is expected to
create exotic topological magnetoelectric effects. A particularly intriguing
phenomenon in this case is the magnetic field dependence of electrical
resistance, or magnetoresistance (MR). The intricate interplay between
topological protection and broken-TRS may lead to highly unconventional MR
behaviour that can find unique applications in magnetic sensing and data
storage. However, so far the MR of TI with spontaneously broken TRS is still
poorly understood, mainly due to the lack of well-controlled experiments. In
this work, we investigate the magneto transport properties of a ferromagnetic
TI thin film fabricated into a field effect transistor device. We observe an
unusually complex evolution of MR when the Fermi level (EF) is tuned across the
Dirac point (DP) by gate voltage. In particular, MR tends to be positive when
EF lies close to the DP but becomes negative at higher energies. This trend is
opposite to that expected from the Berry phase picture for localization, but is
intimately correlated with the gate-tuned magnetic order. We show that the
underlying physics is the competition between the topology-induced weak
antilocalization and magnetism-induced negative MR. The simultaneous electrical
control of magnetic order and magneto transport facilitates future TI-based
spintronic devices. | | Source: | arXiv, 1409.6862 | | Services: | Forum | Review | PDF | Favorites | |
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