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High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator | | Cui-Zu Chang
; Weiwei Zhao
; Duk Y. Kim
; Haijun Zhang
; Badih A. Assaf
; Don Heiman
; Shou-Cheng Zhang
; Chaoxing Liu
; Moses H. W. Chan
; Jagadeesh S. Moodera
; | | Date: |
11 Dec 2014 | | Abstract: | The discovery of the integer quantum Hall (QH) effect in 1980 led to the
realization of a topological electronic state with dissipationless currents
circulating in one direction along the edge of a two dimensional electron layer
under a strong magnetic field.1,2 The quantum anomalous Hall (QAH) effect
shares a similar physical phenomenon as the QH effect, whereas its physical
origin relies on the intrinsic spin-orbit coupling and ferromagnetism.3-13
Since the QAH effect does not require an external field and the associated
Landau levels, it is believed that this effect has unique potential for
applications in electronic devices with low-power consumption.3-16 Recently,
the QAH effect has been experimentally observed in thin films of the
ferromagnetic topological insulators (FMTI), Cr-doped (Bi,Sb)2Te3.14 However,
in this system, a large residual longitudinal resistance 0.098h/e2(~2.53kohm)
remains, and thus the Hall conductance is only around 0.987e2/h at zero
magnetic field, hampering the precise realization of this dissipationless
topological state. Here we report the experimental observation of the QAH state
in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down
to 0.00013+-0.00007h/e2 (~3.35+-1.76ohm), Hall conductance reaching
0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004 degree
at T=25mK, thus realizing the anomalous Hall transport with negligible
dissipation in the absence of any initial magnetic field. The advantage of this
system comes from the fact that it is a hard ferromagnet with a large coercive
field (Hc>1.0T) and a relative high Curie temperature. This realization of
robust QAH state in hard FMTIs is a major step towards dissipationless
electronic applications without external fields. | | Source: | arXiv, 1412.3758 | | Services: | Forum | Review | PDF | Favorites | |
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