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27 April 2024 |
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Article overview
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Origins of GaN(0 0 0 1) surface reconstructions | | S. Vezian
; F. Semond
; J. Massies
; D.W. Bullock
; Z. Ding
; P.M. Thibado
; | | Date: |
31 Dec 2014 | | Abstract: | The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without
trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been
studied with in situ reflection high-energy electron diffraction (RHEED) and
scanning tunneling microscopy (STM). Various reconstructions are observed with
RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux
or after depositing known amounts of Ga as a function of substrate temperature.
In situ STM images reveal that only a few of these reconstructions yield
long-range periodicity in real space. The controversial role of arsenic on Ga
induced reconstructions was also investigated using two independent MBE
chambers and X-ray photoelectron spectroscopy. | | Source: | arXiv, 1501.0143 | | Services: | Forum | Review | PDF | Favorites | |
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