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26 April 2024 |
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Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy | | Hongjun Liu
; Hao Zheng
; Fang Yang
; Lu Jiao
; Jinglei Chen
; Wingkin Ho
; Chunlei Gao
; Jinfeng Jia
; Maohai Xie
; | | Date: |
15 Jun 2015 | | Abstract: | Bilayer (BL) MoSe2 films grown by molecular-beam epitaxy (MBE) are studied by
scanning tunneling microscopy and spectroscopy (STM/S). Similar to monolayer
(ML) films, networks of inversion domain boundary (DB) defects are observed
both in the top and bottom layers of BL MoSe2, and often they are seen
spatially correlated such that one is on top of the other. There are also
isolated ones in the bottom layer without companion in the top-layer and are
detected by STM/S through quantum tunneling of the defect states through the
barrier of the MoSe2 ML. Comparing the DB states in BL MoSe2 with that of ML
film reveals some common features as well as differences. Quantum confinement
of the defect states is indicated. Point defects in BL MoSe2 are also observed
by STM/S, where ionization of the donor defect by the tip-induced electric
field is evidenced. These results are of great fundamental interests as well as
practical relevance of devices made of MoSe2 ultrathin layers. | | Source: | arXiv, 1506.4467 | | Services: | Forum | Review | PDF | Favorites | |
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