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Effect of interface geometry on electron tunnelling in Al/Al$_2$O$_3$/Al junctions | | M Koberidze
; A V Feshchenko
; M J Puska
; R M Nieminen
; J P Pekola
; | | Date: |
27 Nov 2015 | | Abstract: | We investigate how different interface geometries of an Al/Al$_2$O$_3$
junction, a common component of modern tunnel devices, affect electron
transport through the tunnel barrier. We study six distinct Al/Al$_2$O$_3$
interfaces which differ in stacking sequences of the metal and the oxide
surface atoms and the oxide termination. To construct model potential barrier
profiles for each examined geometry, we rely on first-principles
density-functional theory (DFT) calculations for the barrier heights and the
shapes of the interface regions as well as on experimental data for the barrier
widths. We show that even tiny variations in the atomic arrangement at the
interface cause significant changes in the tunnel barrier parameters and,
consequently, in electron transport properties. Especially, we obtain that
variations in the crucial barrier heights and widths can be as large as 2 eV
and 5 AA, respectively. Finally, to gain information about the average
properties of the measured junction, we fit the conductance calculated within
the WKB approximation to the experimental data and interpret the fit parameters
with the help of the DFT results. | | Source: | arXiv, 1511.8636 | | Services: | Forum | Review | PDF | Favorites | |
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