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Direct growth of low-doped graphene on Ge/Si(001) surfaces | | J. Dabrowski
; G. Lippert
; J. Avila
; J. Baringhaus
; I. Colambo
; Yu. S. Dedkov
; F. Herziger
; G. Lupina
; J. Maultzsch
; T. Schaffus
; T. Schroeder
; M. Sowinska
; C. Tegenkamp
; D. Vignaud
; M.-C. Asensio
; | | Date: |
8 Apr 2016 | | Abstract: | The practical difficulties to use graphene in microelectronics and
optoelectronics is that the available methods to grow graphene are not easily
integrated in the mainstream technologies. A growth method that could overcome
at least some of these problems is chemical vapour deposition (CVD) of graphene
directly on semiconducting (Si or Ge) substrates. Here we report on the
comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on
the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$)
precursor and describe the physical properties of the films as well as we
discuss the surface reaction and diffusion processes that may be responsible
for the observed behavior. Using nano angle resolved photoemission (nanoARPES)
complemented by transport studies and Raman spectroscopy, we report the direct
observation of massless Dirac particles in monolayer graphene, providing a
comprehensive mapping of their low-hole doped Dirac electron bands. The
micrometric graphene flakes are oriented along two predominant directions
rotated by $30^circ$ with respect to each other. The growth mode is attributed
to the mechanism when small graphene "molecules" nucleate on the Ge(001)
surface and it is found that hydrogen plays a significant role in this process. | | Source: | arXiv, 1604.2315 | | Services: | Forum | Review | PDF | Favorites | |
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