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27 April 2024 |
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Gate-tunable Electron and Hole Mobility in Crystals of Semi-metallic WTe$_2$ | | Lin Wang
; Ignacio Gutiérrez-Lezama
; Céline Barreteau
; Dong-Keun Ki
; Enrico Giannini
; Alberto F. Morpurgo
; | | Date: |
29 Apr 2016 | | Abstract: | We find that crystals of semi-metallic tungsten ditelluride (WTe$_2$) exhibit
a strong, unusual gate dependence of magneto-transport, originating from
gate-induced variations in the mobility ($mu_{e,h}$) of bulk electrons and
holes. The phenomenon occurs if the crystal thickness is smaller than the mean
free path of bulk carriers in WTe$_2$. The gate-dependence of the electron and
hole mobility $mu_{e,h}(V_g)$ is obtained by analyzing classical
magneto-transport. It explains the evolution of the Shubnikov-de Haas
resistance oscillations, and allows us to determine whether --at a given
frequency-- the oscillations originate from electrons or holes orbits. Our
results demonstrate an unconventional field-effect mechanism enabling the bulk
electronic properties of a material to be tuned on a length scale vastly
exceeding (nearly two orders of magnitude) the electrostatic screening length. | | Source: | arXiv, 1604.8762 | | Services: | Forum | Review | PDF | Favorites | |
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