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26 April 2024 |
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Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures | | U. Jahn
; M. Musolino
; J. Lähnemann
; P. Dogan
; S. Fernández Garrido
; J. F. Wang
; K. Xu
; D. Cai
; L. F. Bian
; X. J. Gong
; H. Yang
; | | Date: |
10 May 2016 | | Abstract: | Several ten $mu$m GaN have been deposited on a silicon substrate using a
two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been
covered by AlN layers and GaN nanostructures grown by plasma-assisted
molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step,
stacking faults (SF) form, which show distinct luminescence lines and
stripe-like features in cathodoluminescence images of the cross-section of the
layers. These cathodoluminescence features allow for an insight into the growth
process. During a second high-temperature (high-T) step, the SFs disappear, and
the luminescence of this part of the GaN layer is dominated by the donor-bound
exciton. For templates consisting of both a thin AlN buffer and GaN
nanostructures, a silicon incorporation into the GaN grown by HVPE is not
observed. Moreover, the growth mode of the (high-T) HVPE step depends on the
specific structure of the AlN/GaN template, where in a first case, the epitaxy
is dominated by the formation of slowly growing facets, while in a second case,
the epitaxy proceeds directly along the c-axis. | | Source: | arXiv, 1605.3089 | | Services: | Forum | Review | PDF | Favorites | |
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