|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'504'928
Articles rated: 2609
26 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices | | Ahmet Avsar
; Jun Y. Tan
; Luo Xin
; Khoong Hong Khoo
; Yuting Yeo
; Kenji Watanabe
; Takashi Taniguchi
; Su Ying Quek
; Barbaros Ozyilmaz
; | | Date: |
17 Aug 2017 | | Abstract: | Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few
atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such
as Black Phosphorus (BP). However, the effects of h-BN on Schottky barrier
height, doping and contact resistance are not well known. Here, we investigate
these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co)
contacts. In sharp contrast to directly Co contacted p-type BP devices, we
observe strong n-type conduction upon insertion of the h-BN at the Co/BP
interface. First principles calculations show that this difference arises from
the much larger interface dipole at the Co/h-BN interface compared to the Co/BP
interface, which reduces the work function of the Co/h-BN contact. The Co/h-BN
contacts exhibit low contact resistances (~ 4.5 k-ohm), and are Schottky
barrier free. This allows us to probe high electron mobilities (4,200 cm2/Vs)
and observe insulator-metal transitions even under two-terminal measurement
geometry. | | Source: | arXiv, 1708.5162 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER