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26 April 2024

» arxiv » 1812.4978

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Thickness dependence of electron-electron interactions in topological p-n junctions
Dirk Backes ; Danhong Huang ; Rhodri Mansell ; Martin Lanius ; Jörn Kampmeier ; David Ritchie ; Gregor Mussler ; Godfrey Gumbs ; Detlev Grützmacher ; Vijay Narayan ;
Date:	12 Dec 2018
Abstract:	Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.
Source:	arXiv, 1812.4978
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