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26 April 2024
 
  » arxiv » 1812.7160

 Article overview



Breaking molecular nitrogen under mild conditions with an atomically clean lanthanide surface
Felicia Ullstad ; Gabriel Bioletti ; Jay Chan ; Audrey Proust ; Charlotte Bodin ; Ben J. Ruck ; H. Joe Trodahl ; Franck Natali ;
Date 18 Dec 2018
AbstractA route to break molecular nitrogen (N2) under mild conditions is demonstrated by N2 gas cracking on, and incorporation into, lanthanide films. Successful growth of lanthanide nitride thin films, made by evaporation of lanthanides in a partial N2 atmosphere at room temperature and pressure as low as 10-4 Torr, is confirmed using X-ray diffraction. In-situ conductance measurements of pure lanthanide thin films exposed to N2 gas show an immediate surface reaction and a slower bulk reaction. Finally, we report partial reversal of the nitrogen incorporation in a lanthanide nitride by cycling vacuum and nitrogen conditions in the sample chamber.A route to break molecular nitrogen (N2) under mild conditions is demonstrated by N2 gas cracking on, and incorporation into, lanthanide films. Successful growth of lanthanide nitride thin films, made by evaporation of lanthanides in a partial N2 atmosphere at room temperature and pressure as low as 10-4 Torr, is confirmed using X-ray diffraction. Insitu conductance measurements of pure lanthanide thin films exposed to N2 gas show an immediate surface reaction and a slower bulk reaction. Finally, we report partial reversal of the nitrogen incorporation in a lanthanide nitride by cycling vacuum and nitrogen conditions in the sample chamber.
Source arXiv, 1812.7160
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