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26 April 2024
 
  » arxiv » 1902.0170

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Laser-Driven Electron Lensing in Silicon Microstructures
Dylan S. Black ; Kenneth J. Leedle ; Yu Miao ; Uwe Niedermayer ; Robert L. Byer ; Olav Solgaard ;
Date 1 Feb 2019
AbstractWe demonstrate a laser-driven, tunable electron lens fabricated in monolithic silicon. The lens consists of an array of silicon pillars pumped symmetrically by two 300 fs, 1.95 $mu$m wavelength, nJ-class laser pulses from an optical parametric amplifier. The optical near-field of the pillar structure focuses electrons in the plane perpendicular to the pillar axes. With 100 $pm$ 10 MV/m incident laser fields, the lens focal length is measured to be 50 $pm$ 4 $mu$m, which corresponds to an equivalent quadrupole focusing gradient $B’$ of 1.4 $pm$ 0.1 MT/m. By varying the incident laser field strength, the lens can be tuned from a 21 $pm$ 2 $mu$m focal length ($B’>3.3$ MT/m) to focal lengths on the cm-scale.
Source arXiv, 1902.0170
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