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Valley-Contrasting Orbital Magnetic Moment Induced Negative Magnetoresistance | | Hailong Zhou
; Cong Xiao
; Qian Niu
; | | Date: |
11 Jul 2019 | | Abstract: | The valley-contrasting orbital magnetic moment of Bloch electrons allows the
lifting of valley degeneracy by an out-of-plane magnetic field. We demonstrate
that this leads to negative magnetoresistance, utilizing a gapped
two-dimensional multi-valley model as an example. An intuitive physical picture
in terms of the increased carrier density from a magnetic gating effect is
proposed for this negative magnetoresistance. In particular, giant negative
magnetoresistance is achieved after one of the two valleys is depleted by the
magnetic field. This new mechanism of negative magnetoresistance is argued to
be relevant in ionic-liquid gated gapped graphene with small effective mass. | | Source: | arXiv, 1907.4992 | | Services: | Forum | Review | PDF | Favorites | |
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