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26 April 2024

» arxiv » 1910.1591

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Evidence for a pressure-induced phase transition of few-layer graphene to 2D diamond
Luiz G. Pimenta Martins ; Diego L. Silva ; Jesse S. Smith ; Ang-Yu Lu ; Cong Su ; Marek Hempel ; Connor Occhialini ; Xiang Ji ; Ricardo Pablo ; Rafael S. Alencar ; Alan C. R. Souza ; Alan B. de Oliveira ; Ronaldo J.C. Batista ; Tomás Palacios ; Matheus J.S. Matos ; Mário S.C. Mazzoni ; Riccardo Comin ; Jing Kong ; Luiz G. Cançado ;
Date:	3 Oct 2019
Abstract:	We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring at ~6 GPa for bi-layer graphene, and in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrate. A nucleation-propagation model is proposed as the diamondization mechanism, allowing for the formation of diamondene, a 2D ferromagnetic semiconductor. High-pressure x-ray diffraction on a graphene powder indicates the formation of hexagonal diamond, consistent with the bulk limit of eclipsed-conformed diamondene.
Source:	arXiv, 1910.1591
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