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29 April 2024 |
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Controlled introduction of defects to delafossite metals by electron irradiation | | V. Sunko
; P. H. McGuinness
; C. S. Chang
; E. Zhakina
; S. Khim
; C. E. Dreyer
; M. Konczykowski
; M. König
; D. A. Muller
; A. P. Mackenzie
; | | Date: |
6 Jan 2020 | | Abstract: | The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the
highest conductivity materials known, with low temperature mean free paths of
tens of microns in the best as-grown single crystals. A key question is whether
these very low resistive scattering rates result from strongly suppressed
backscattering due to special features of the electronic structure, or are a
consequence of highly unusual levels of crystalline perfection. We report the
results of experiments in which high energy electron irradiation was used to
introduce point disorder to the Pd and Pt layers in which the conduction
occurs. We obtain the cross-section for formation of Frenkel pairs in absolute
units, and cross-check our analysis with first principles calculations of the
relevant atomic displacement energies. We observe an increase of resistivity
that is linear in defect density with a slope consistent with scattering in the
unitary limit. Our results enable us to deduce that the as-grown crystals
contain extremely low levels of in-plane defects of approximately $0.001\%$.
This confirms that crystalline perfection is the most important factor in
realizing the long mean free paths, and highlights how unusual these
delafossite metals are in comparison with the vast majority of other
multi-component oxides and alloys. We discuss the implications of our findings
for future materials research. | | Source: | arXiv, 2001.1471 | | Services: | Forum | Review | PDF | Favorites | |
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