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Band gap reconstruction at the interface between black phosphorus and a gold electrode | | N.N. Orlova
; N.S. Ryshkov
; A.A. Zagitova
; V.I. Kulakov
; A.V. Timonina
; D.N. Borisenko
; N.N. Kolesnikov
; E.V. Deviatov
; | | Date: |
6 Apr 2020 | | Abstract: | We experimentally investigate charge transport through the interface between
a gold electrode and a black phosphorus single crystal. The experimental
$dI/dV(V)$ curves are characterized by well developed zero-bias conductance
peak and two strongly different branches. We find that two branches of
asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is
consistent with the theoretically predicted band gap reconstruction at the
surface of black phosphorus under electric field. This conclusion is confirmed
by experimental comparison with the symmetric curves for narrow-gap (WTe$_2$)
and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate
p-type dopants redistribution at high bias voltages of different sign, which
opens a way to use the interface structures with black phosphorus in resistive
memory applications. | | Source: | arXiv, 2004.2813 | | Services: | Forum | Review | PDF | Favorites | |
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