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2D Metal-Insulator transition as a percolation transition | | S. Das Sarma
; M. P. Lilly
; E. H. Hwang
; L. N. Pfeiffer
; K. W. West
; J. L. Reno
; | | Date: |
26 Jun 2004 | | Subject: | Mesoscopic Systems and Quantum Hall Effect; Disordered Systems and Neural Networks | cond-mat.mes-hall cond-mat.dis-nn | | Affiliation: | 1,2), M. P. Lilly , E. H. Hwang , L. N. Pfeiffer , K. W. West , J. L. Reno ( Condensed Matter Theory Center, Department of Physics, University of Maryland, Sandia National Laboratories, Bell Laboratories, Lucent Technologies | | Abstract: | By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of $sim 1.4$ approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system. | | Source: | arXiv, cond-mat/0406655 | | Services: | Forum | Review | PDF | Favorites | |
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