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27 April 2024
 
  » arxiv » cond-mat/0411728

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Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
F. Fischer ; M. Grayson ; D. Schuh ; M. Bichler ; G. Abstreiter ;
Date 29 Nov 2004
Journal Appl. Phys. Lett. 86, 192106 (2005)
Subject Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci
AbstractWe implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly auto-compensated doping is first characterized in bulk samples, identifying the metal-insulator transition density and confirming classic hopping conduction in the insulating regime. To overcome the poor morphology inherent to Si p-type (110) growth, heterostructures are fabricated with only the modulation doping layer grown under p-type conditions. Such heterostructures show a hole mobility of 1.75x10^2 cm^2/Vs at density p=2.4x10^11 cm^-2. We identify the zero field spin-splitting characteristic of p-type heterostructures, but observe a remarkably isotropic mobility and a persistent photoconductivity unusual for p-heterojunctions grown using other doping techniques. This new modulated growth technique is particularly relevant for p-type cleaved-edge overgrowth and for III-V growth chambers where Si is the only dopant.
Source arXiv, cond-mat/0411728
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