|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'506'133
Articles rated: 2609
26 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
Low-loss integrated nanophotonic circuits with layered semiconductor materials | | Tianyi Liu
; Ioannis Paradisanos
; Jijun He
; Alisson R. Cadore
; Junqiu Liu
; Mikhail Churaev
; Rui Ning Wang
; Arslan S. Raja
; Clément Javerzac-Galy
; Philippe Rölli
; Domenico De Fazio
; Barbara L. T. Rosa
; Sefaattin Tongay
; Giancarlo Soavi
; Andrea C. Ferrari
; Tobias J. Kippenberg
; | | Date: |
12 Oct 2020 | | Abstract: | Monolayer transition metal dichalcogenides with direct bandgaps are emerging
candidates for microelectronics, nano-photonics, and optoelectronics.
Transferred onto photonic integrated circuits (PICs), these semiconductor
materials have enabled new classes of light-emitting diodes, modulators and
photodetectors, that could be amenable to wafer-scale manufacturing. For
integrated photonic devices, the optical losses of the PICs are critical. In
contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss
integrated platform with a wide transparency window from ultraviolet to
mid-infrared and absence of two-photon absorption at telecommunication bands.
Moreover, it is suitable for nonlinear integrated photonics due to its high
Kerr nonlinearity and high-power handing capability. These features of Si3N4
are intrinsically beneficial for nanophotonics and optoelectronics
applications. Here we report a low-loss integrated platform incorporating
monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic
microresonators. We show that, with the 1L-MoTe2, microresonator quality
factors exceeding 3 million in the telecommunication O-band to E-band are
maintained. We further investigate the change of microresonator dispersion and
resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical
loss introduced by 1L-MoTe2 in the telecommunication bands, out of the
excitonic transition region. Our work presents a key step for low-loss, hybrid
PICs with layered semiconductors without using heterogeneous wafer bonding. | | Source: | arXiv, 2010.06014 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER