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Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing | | Vincent I. Conrad
; Andrew D. Greentree
; David N. Jamieson
; Lloyd C.L. Hollenberg
; | | Date: |
19 Dec 2004 | | Journal: | Journal of Computational and Theoretical Nanoscience, 2, 214 (2005) DOI: 10.1166/jctn.2005.105 | | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall quant-ph | | Abstract: | The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where quantum information processing outcomes depend on the location of a single electron on nearby quantum dots. In this paper we investigate various geometries of a SET in order to maximize the device’s sensitivity to charge transfer between quantum dots. Through the use of finite element modeling we model the materials and geometries of an Al/Al2O3 SET measuring the state of quantum dots in the Si substrate beneath. The investigation is motivated by the quest to build a scalable quantum computer, though the methodology used is primarily that of circuit theory. As such we provide useful techniques for any electronic device operating at the classical/quantum interface. | | Source: | arXiv, cond-mat/0501437 | | Services: | Forum | Review | PDF | Favorites | |
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