|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'504'928
Articles rated: 2609
26 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
Intrinsic Spin Hall Effect in Semiconductors and Simple Metals: First-Principles Calculations | | Y. Yao
; Z. Fang
; | | Date: |
15 Feb 2005 | | Subject: | Mesoscopic Systems and Quantum Hall Effect; Materials Science | cond-mat.mes-hall cond-mat.mtrl-sci | | Abstract: | First-principles calculations are applied to study the intrinsic spin Hall effects in semiconductors and simple metals. We predict that the spin Hall conductivity is high in Si, and shows sign change in n-doped GaAs as carrier density varies. The latter may be used to distinguish the effect from the extrinsic one. Both GaAs and Si are found to be spin Hall insulators. The spin Hall conductivity in W and Au is very large and has opposite sign. The calculated results are compared with experiments. | | Source: | arXiv, cond-mat/0502351 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER