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27 April 2024
 
  » arxiv » cond-mat/0503306

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On the low-field insulator-quantum Hall conductor transitions
Tsai-Yu Huang ; J. R. Juang ; C. F. Huang ; Gil-Ho Kim ; Chao-Ping Huang ; C.-T. Liang ; Y. H. Chang ; Y. F. Chen ; Y. Lee ; D. A. Ritchie ;
Date 12 Mar 2005
Journal Physica E 22, 240-243 (2004)
Subject Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall
AbstractWe studied the insulator-quantum Hall conductor transition which separates the low-field insulator from the quantum Hall state of the filling factor $ u=4$ on a gated two-dimensional GaAs electron system containing self-assembled InAs quantum dots. To enter the $ u=4$ quantum Hall state directly from the low-field insulator, the two-dimensional system undergoes a crossover from the low-field localization to Landau quantization. The crossover, in fact, covers a wide range with respect to the magnetic field rather than only a small region near the critical point of the insulator-quantum Hall conductor transition.
Source arXiv, cond-mat/0503306
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