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26 April 2024 |
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Population Inversion Induced by Resonant States in Semiconductors | | M.A.Odnoblyudov
; I.N.Yassievich
; M.S.Kagan
; Yu.M.Galperin
; X.H.Wang
; K.A.Chao
; | | Date: |
25 Nov 1998 | | Subject: | Materials Science | cond-mat.mtrl-sci | | Affiliation: | 1 and 2), I.N.Yassievich (1 and 2), M.S.Kagan , Yu.M.Galperin , X.H.Wang and K.A.Chao ( Department of Theoretical Physics, Lund University; Ioffe Physico-Technical Institute RAS, St.Petersburg, Russia; Institute for Radioengineering and Electronic | | Abstract: | We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed. | | Source: | arXiv, cond-mat/9811358 | | Services: | Forum | Review | PDF | Favorites | |
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