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26 April 2024 |
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Article overview
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Lande g-tensor in semiconductor nanostructures | T. P. Mayer Alegre
; F. G. G. Hernández
; A. Pereira
; G. Medeiros-Ribeiro
; | Date: |
25 Apr 2006 | Subject: | Materials Science | Abstract: | Understanding the electronic structure of semiconductor nanostructures is not complete without a detailed description of their corresponding spin-related properties. Here we explore the response of the shell structure of InAs self-assembled quantum dots to magnetic fields oriented in several directions, allowing the mapping of the g-tensor modulus for the s and p-shells. We found that the g-tensors for the s and p shells show a very different behavior. The s-state in being more localized allows the probing of the confining potential details by sweeping the magnetic field orientation from the growth direction towards the in-plane direction. As for the p-state, we found that the g-tensor modulus is closer to that of the surrounding GaAs, consistent with a larger delocalization. These results reveal further details of the confining potentials of self-assembled quantum dots that have not yet been probed, in addition to the assessment of the g-tensor, which is of fundamental importance for the implementation of spin related applications. | Source: | arXiv, cond-mat/0604578 | Services: | Forum | Review | PDF | Favorites |
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