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26 April 2024 |
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Evidence of a pressure-induced metallization process in monoclinic VO$_2$ | E. Arcangeletti
; L. Baldassarre
; D. Di Castro
; S. Lupi
; L. Malavasi
; C. Marini
; A. Perucchi
; P. Postorino
; | Date: |
10 Nov 2006 | Subject: | Materials Science; Strongly Correlated Electrons | Abstract: | Raman and combined trasmission and reflectivity mid infrared measurements have been carried out on monoclinic VO$_2$ at room temperature over the 0-19 GPa and 0-14 GPa pressure ranges, respectively. The pressure dependence obtained for both lattice dynamics and optical gap shows a remarkable stability of the system up to P*$sim$10 GPa. Evidence of subtle modifications of V ion arrangements within the monoclinic lattice together with the onset of a metallization process via band gap filling are observed for P$>$P*. Differently from ambient pressure, where the VO$_2$ metal phase is found only in conjunction with the rutile structure above 340 K, a new room temperature metallic phase coupled to a monoclinic structure appears accessible in the high pressure regime, thus opening to new important queries on the physics of VO$_2$. | Source: | arXiv, cond-mat/0611281 | Services: | Forum | Review | PDF | Favorites |
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