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Visualising highly localised luminescence in GaN/AlN heterostructures in nanowires | | L. F. Zagonel
; L. Rigutti
; M. Tchernycheva
; G. Jacopin
; R. Songmuang
; M. Kociak
; | | Date: |
12 Sep 2012 | | Abstract: | The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN
nanowire have been studied by spatially resolved cathodoluminescence (CL) at
the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM)
operating in spectrum imaging mode. For the electron beam excitation in the
QDisc region, the luminescence signal is highly localized with spatial
extension as low as 5 nm due to the high band gap difference between GaN and
AlN. This allows for the discrimination between the emission of neighbouring
QDiscs and for evidencing the presence of lateral inclusions, about 3 nm thick
and 20 nm long rods (quantum rods, QRods), grown unintentionally on the
nanowire sidewalls. These structures, also observed by STEM dark-field imaging,
are proven to be optically active in nanoCL, emitting at similar, but usually
shorter, wavelengths with respect to most QDiscs. | | Source: | arXiv, 1209.2545 | | Services: | Forum | Review | PDF | Favorites | |
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