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Nonlinearity of Acoustic Effects and High-Frequency Electrical Conductivity in GaAs/AlGaAs Heterostructures under Conditions of the Integer Quantum Hall Effect | | I. L. Drichko
; A. M. Diakonov
; I. Yu. Smirnov
; A. I. Toropov
; | | Date: |
24 Aug 2000 | | Journal: | Semiconductors 34, 436 (2000) | | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall | | Affiliation: | a), A. M. Diakonov (a), I. Yu. Smirnov (a), and A. I. Toropov (b) (a - A.F.Ioffe PTI of RAS, b - SPI of SD RAS | | Abstract: | The absorption coefficient for surface acoustic wave $Gamma$ and variation in the wave velocity $Delta V/V$ were measured in GaAs/AlGaAs heterostructures; the above quantities are related to interaction of the wave with two-dimensional electron gas and depend nonlinearly on the power of the wave. Measurements were performed under conditions of the integer quantum Hall effect (IQHE), in which case the two-dimensional electron gas was localized in a random fluctuation potential of impurities. The dependences of the components $sigma_1(E)$ and $sigma_2(E)$ of high-frequency conductivity $sigma=sigma_1 - isigma_2$ on the electric field of the surface wave were determined. In the range of the conductivity obeying the Arrhenius law ($sigma_1 gg sigma_2$), the results obtained are interpreted in terms of the Shklovskii theory of nonlinear percolation-based conductivity, which makes it possible to estimate the magnitude of the fluctuation potential of impurities. The dependences $sigma_1(E)$ and $sigma_2(E)$ in the range of high-frequency hopping electrical conductivity, in which case ($sigma_1 ll sigma_2$) and the theory of nonlinearities has not been yet developed, are reported. | | Source: | arXiv, cond-mat/0008356 | | Services: | Forum | Review | PDF | Favorites | |
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