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Spin relaxation in $n$-type GaAs quantum wells from a full microscopic many-body approach | | J. Zhou
; J. L. Cheng
; M. W. Wu
; | | Date: |
31 May 2006 | | Subject: | Materials Science | | Abstract: | We perform a full microscopic many-body investigation on the spin relaxation in $n$-type (001) GaAs quantum wells due to the D’yakonov-perel’ mechanism from very low temperature to the room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the scattering such as the electron--acoustic-phonon, the electron--longitudinal-optical-phonon, the electron--nonmagnetic-impurity and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory are in excellent agreement with the experimental data by Ohno {em et al.} [Physica E {f 6}, 817 (2000)] over the whole temperature regime (from 20 K to 300 K). We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density and well width. We predict a peak in the spin relaxation time at low temperature ($<50$ K) in samples with low electron density ({em e.g.}, density less than $1 imes 10^{11}$ cm$^{-2}$) but high mobility where the Coulomb scattering is dominant. This peak disappears in samples with high electron density ({em e.g.} $2 imes 10^{11}$ cm$^{-2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high temperature case predicted. | | Source: | arXiv, cond-mat/0606007 | | Services: | Forum | Review | PDF | Favorites | |
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